M-RAM (Magneto RAM)

A form of solid state chip-based memory storage that uses magnetism in favor of electricity to store data. MRAM is highly anticipated because it is extremely efficient compared to current forms of RAM, it has seemingly unlimited endurance, and it can be embedded into processor functions (great for performance). MRAM promises to not only be as fast as SRAM, but also match the storage capacity of DRAM and the non-volatility of Flash memory. Consequently, it is expected to eventually become the memory standard for future electronics, replacing the current standard DRAM (unlike with DRAM chips, data on solid state chips doesn’t have to be refreshed continuously – which saves lots of power). Moreover, MRAM will likely compete with Flash memory in the portable device market for the same reason that it will replace DRAM – it reduces power consumption. For users of laptops and other portable devices, such as MiniDisc players and cell phones, MRAM looks to be the key to much longer battery life.